BAR 65-02W

Oct 21, 2009 - Forward current. IF. 100. mA. Operating temperature range. °C. Top. - 55 ...+125. - 55 ...+150. Storage temperature. Tstg. Semiconductor Group.
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BAR 65-02W Silicon RF Switching Diode Preliminary data • Low loss, low capacitance PIN-diode • Band switch for TV-tuners

2

• Series diode for mobile communication transmit-receiver switch

1

VES05991

Type

Marking

Ordering Code

Pin Configuration

Package

BAR 65-02W

N

Q62702-A1216

1=C

SCD-80

2=A

Maximum Ratings Parameter

Symbol

Diode reverse voltage

VR

30

V

Forward current

IF

100

mA

Operating temperature range

T op

- 55 ...+125

°C

Storage temperature

T stg

- 55 ...+150

Semiconductor Group Semiconductor Group

11

Value

Unit

Jun-18-1998 1998-11-01

BAR 65-02W

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter

Symbol

Values

Unit

min.

typ.

max.

IR

-

-

20

nA

VF

-

0.93

1

V

DC characteristics Reverse current

VR = 20 V Forward voltage

I F = 100 mA AC characteristics

CT

Diode capacitance

pF

VR = 1 V, f = 1 MHz

-

0.6

0.9

VR = 3 V, f = 1 MHz

-

0.57

0.8 Ω

rf

Forward resistance

I F = 5 mA, f = 100 MHz

-

0.65

0.95

I F = 10 mA, f = 100 MHz

-

0.56

0.9

-

0.6

-

Ls

Series inductance

Semiconductor Group Semiconductor Group

22

nH

Jun-18-1998 1998-11-01

BAR 65-02W

Forward current IF = f (V F)

Forward resistance rf = f(IF) f = 100MHz

T A = 25°C 10 3

3.0 Ohm

mA

2.4

10 2

RF

IF

2.2 2.0 1.8 1.6

10 1

1.4 1.2 1.0 10

0

0.8 0.6 0.4 0.2

10 -1 400

500

600

700

800

mV

0.0 -1 10

1000

10

0

mA

IF

VF

Diode capacitance CT = f (V R) f = 1MHz

Diode capacitance CT = f (VR) f = 100MHz

1.0

1.0

pF

CT

pF

0.8

CT

0.8

0.7

0.7

0.6

0.6

0.5

0.5

0.4

0.4

0.3

0.3

0.2 0

1

2

3

4

5

6

7

8

V

0.2 0

10

VR

Semiconductor Group Semiconductor Group

1

2

3

4

5

6

7

8

V

10

VR

33

Jun-18-1998 1998-11-01