BFP620 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor
3
• Provides outstanding performance
2
4
for a wide range of wireless applications
1
• Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz • Maximum stable gain Gms = 21.5 dB at 1.8 GHz Gma = 11 dB at 6 GHz • Gold metallization for extra high reliability • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFP620 1Pb-containing
Marking R2s 1=B
Pin Configuration 2=E
3=C
4=E
-
Package -
SOT343
package may be available upon special request
2007-04-20 1
BFP620 Maximum Ratings Parameter
Symbol
Collector-emitter voltage
VCEO
Value
Unit V
TA > 0 °C
2.3
TA ≤ 0 °C
2.1
Collector-emitter voltage
VCES
7.5
Collector-base voltage
VCBO
7.5
Emitter-base voltage
VEBO
1.2
Collector current
IC
80
Base current
IB
3
Total power dissipation1)
Ptot
185
mW
Junction temperature
Tj
150
°C
Ambient temperature
TA
-65 ... 150
Storage temperature
T stg
-65 ... 150
mA
TS ≤ 95°C
Thermal Resistance Parameter
Symbol
Value
Unit
Junction - soldering point 2)
RthJS
≤ 300
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter
Unit
min.
typ.
max.
2.3
2.8
-
V
ICES
-
-
10
µA
ICBO
-
-
100
nA
IEBO
-
-
3
µA
hFE
110
180
270
DC Characteristics Collector-emitter breakdown voltage
V(BR)CEO
IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 7.5 V, V BE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain
-
IC = 50 mA, VCE = 1.5 V, pulse measured 1T
S is measured on the collector lead at the soldering point to the pcb 2For calculation of R thJA please refer to Application Note Thermal Resistance
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BFP620 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT
-
65
-
Ccb
-
0.12
0.2
Cce
-
0.22
-
Ceb
-
0.46
-
GHz
IC = 50 mA, VCE = 1.5 V, f = 1 GHz Collector-base capacitance
pF
VCB = 2 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 2 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure
dB
F
IC = 5 mA, VCE = 1.5 V, f = 1.8 GHz, ZS = ZSopt IC = 5 mA, VCE = 1.5 V, f = 6 GHz, ZS = ZSopt Power gain, maximum stable1)
-
0.7
-
-
1.3
-
G ms
-
21.5
-
dB
G ma
-
11
-
dB
IC = 50 mA, VCE = 1.5 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Power gain, maximum available1) IC = 50 mA, VCE = 1.5 V, ZS = ZSopt, ZL = ZLopt, f = 6 GHz |S21e|2
Transducer gain
dB
IC = 50 mA, VCE = 1.5 V, ZS = ZL = 50 Ω, f = 1.8 GHz
-
20
-
f = 6 GHz
-
9.5
-
IP 3
-
25.5
-
P-1dB
-
14.5
-
Third order intercept point at output2)
dBm
VCE = 2 V, I C = 50 mA, ZS =ZL=50 Ω, f = 1.8 GHz 1dB Compression point at output IC = 50 mA, VCE = 2 V, ZS =ZL=50 Ω, f = 1.8 GHz 1/2 ma = |S 21e / S12e| (k-(k²-1) ), Gms = |S21e / S12e | 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 1G
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BFP620 SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transistor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = AF = TITF1
0.22 1000 2 2 2 2.707 250.7 1.43 2.4 0.6 0.2 0.5 3
fA V V -
2 -0.0065
-
BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = NK = FC = KF = TITF2
Ω fF ps A V ns -
425 0.25 50 10 3.129 0.6 0.75 10 0 0.5 128.1 -1.42 0.8 7.291E-11 1.0E-5
A mA Ω V deg fF -
NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM
1.025 21 1 18 1.522 2.364 0.3 1.5 124.9 1 0.52 1.078 298
fA pA mA Ω V fF V eV K
All parameters are ready to use, no scalling is necessary.
Package Equivalent Circuit: CBS
RBS
CBCC
LCC
C BFP620_Chip S
B
B
LBB
LBC
CBE C
RCS E
LCB
CCS
RES CES
LEC
CBEI
CCEI LEB CBEO
CCEO
T = 25°C Itf = 2400* ( 1 - 6.5e-3 * (T-25) + 1.0e-5 * (T-25)^2 )
E
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com
C
LBC = LCC = LEC = LBB = LCB = LEB = CBEC = CBCC = CES = CBS = CCS = CCEO = CBEO = CCEI = CBEI = RBS = RCS = RES =
60 50 15 764.5 725.4 259.6 98.4 55.9 140 54 50 106.5 106.7 132.4 99.6 1200 1200 300
pH pH pH pH pH pH fF fF fF fF fF fF fF fF fF Ω Ω Ω
Valid up to 6GHz
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BFP620 Total power dissipation Ptot = ƒ(TS)
Permissible Pulse Load RthJS = ƒ(t p)
10 3
200 mW
160
K/W
RthJS
Ptot
140 120
D = 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0
10 2
100 80 60 40 20 0 0
20
40
60
80
100
120 °C
10 1 -7 10
150
10
-6
10
-5
10
-4
10
-3
10
-2
°C
TS
10
tp
Permissible Pulse Load
Collector-base capacitance Ccb= ƒ(VCB)
Ptotmax/P totDC = ƒ(tp)
f = 1MHz
10 1
0.4
Ptotmax / PtotDC
pF
CCB
0.3
D=0 0.005 0,01 0,02 0,05 0,1 0,2 0,5
0.25
0.2
0.15
0.1
0.05 10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
°C
10
0 0
0
tp
1
2
3
4
5
V
7
VCB
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0
BFP620 Third order Intercept Point IP3=ƒ(IC)
Transition frequency fT= ƒ(IC)
(Output, ZS = ZL=50 Ω)
f = 1GHz
VCE = parameter, f = 900MHz -
VCE = Parameter in V
27
65 GHz
2.3V
dBm
55 21
50 45
18
1
fT
IP3
1.3 to 2.3
1.8V
15
1.3V
40 35 30
12 0.8V
25
9
0.8 0.5
20 15
6
0.3
10 3 5 0 0
10
20
30
40
50
60
70
80 mA
0 0
100
10
20
30
40
50
60
70
80 mA
IC
100
IC
Power gain Gma, Gms = ƒ(IC)
Power Gain Gma, Gms = ƒ(f),
VCE = 1.5V
|S21|² = f (f)
f = Parameter in GHz
VCE = 1.5V, I C = 50mA 55
30 dB
dB 0.9
26
45 40
22
G
G
24
1.8
35
20 30 2.4
18
Gms
25 3
16
20
14
4
12
8 0
15
5 6
10 10
20
30
40
50
60
70 mA
Gma
|S21|²
10 5 0
90
IC
1
2
3
4
GHz
6
f
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BFP620 Power gain Gma, Gms = ƒ (VCE) IC = 50mA f = Parameter in GHz 30 0.9 dB 1.8 2.4
20
G
3 4 5 6
15
10
5
0
-5 0.2
0.6
1
1.4
1.8
V
2.6
VCE
2007-04-20 7
Package SOT343
BFP620
Package Outline 0.9 ±0.1
2 ±0.2 0.1 MAX.
1.3
0.1 A
1
2
0.1 MIN.
0.15
1.25 ±0.1
3 2.1 ±0.1
4
0.3 +0.1 -0.05
+0.1
0.15 -0.05 +0.1 0.6 -0.05
4x 0.1
0.2
M
M
A
Foot Print
1.6
0.8
0.6
1.15 0.9
Marking Layout (Example) Manufacturer
2005, June Date code (YM)
BGA420 Type code
Pin 1
Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.2
2.3
8
4
Pin 1
2.15
1.1
2007-04-20 8
BFP620 Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved.
Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ).
Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
2007-04-20 9