HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS ■
■ ■
STMicroelectronics PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY (> 1500 V) FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING
TO-3
1
APPLICATIONS: ■ HORIZONTAL DEFLECTION FOR COLOUR TV
2
DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds.
c u d
3
o r P
2
TO-218
1
e t le
) s t(
ISOWATT218
3 2 1
INTERNAL SCHEMATIC DIAGRAM
) s ( ct
o s b O -
For TO-3 : C = Tab E = Pin2.
u d o
r P e
ABSOLUTE MAXIMUM RATINGS
t e l o
Symbol V CES V CEO V EBO IC I CM
s b O P tot V isol T stg Tj
April 2002
Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms)
Total Dissipation at T c = 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to Exernal Heatsink Storage Temperature Max. Operating Junction Temperature
BU208A TO - 3 150
Value 1500 700 10 8 15 BU508A BU508AFI TO - 218 ISOWATT218 125 50 2500
-65 to 175 -65 to 150 175 150
-65 to 150 150
Unit V V V A A
W V o o
C C
1/8
BU208A / BU508A / BU508AFI THERMAL DATA
R thj-case
Thermal Resistance Junction-case
TO-3
TO-218
ISOWATT218
1
1
2.5
Max
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol
Parameter
Test Conditions
I CES
Collector Cut-off Current (V BE = 0)
V CE = 1500 V V CE = 1500 V
I EBO
Emitter Cut-off Current (I C = 0)
V EB = 5 V
V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0)
Min.
T C = 125 o C
I C = 100 mA
Emitter Base Voltage (I C = 0)
I E = 10 mA
V CE(sat) ∗
Collector-Emitter Saturation Voltage
I C = 4.5 A
IB = 2 A
V BE(sat) ∗
Base-Emitter Saturation Voltage
I C = 4.5 A
IB = 2 A
ts tf
INDUCTIVE LOAD Storage Time Fall Time
I C = 4.5 A h FE = 2.5 V CC = 140 V L C = 0.9 mH L B = 3 µH
- Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 µm
SWITCH MODE POWER SUPPLIES. DESCRIPTION. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. INTERNAL ...
62.5. oC/W. oC/W. ELECTRICAL CHARACTERISTICS (Tcase = 25 o. C unless ... Collector-Emitter. Saturation Voltage. IC =3A. IB = 0.6 A. IC =4A. IB = 0.8 A.
High-output dual power amplifier. BA5417. The BA5417 is a 6 to 15V-compatible dual power amplifier developed for use radio cassette players. It is equipped ...
Collector Cut-off. Current (IB = 0) for 2N3771 VCB = 30 V for 2N3772 VCB = 50 V. 10. 10. mA. mA. ICBO. Collector Cut-off. Current (IE = 0) for 2N3771 VCB = 50 ...
Jan 14, 2003 - these devices can be used with external components to detect user ..... power supply. · NMOS open drain output application with R-C delay.
Sep 30, 2003 - INTEGRATED CIRCUITS ... circuits. Further, they can drive lamps or relays, switching voltages ..... Exposure to limiting values for extended periods may affect device reliability. ... Koninklijke Philips Electronics N.V. 2003.
Oct 11, 2004 - µA. IEBO emitter-base cut-off current. VEB =3V; IC =0 A. â. 10. nA. hFE. DC current gain. VCE = 10 V; IC = 0.1 mA. 35. â. VCE = 10 V; IC = 1 mA.
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is ... not intended to be an exhaustive list of all such trademarks.
Aug 8, 2005 - power switches for power-distribution systems that require multiple power switches in a single package. Each switch is ...... Except where mandated by government requirements, testing of all parameters of ... Mailing Address:.
These power-distribution switches are designed to current limit at 0.9 A. TPS201xA ... Products conform to specifications per the terms of Texas Instruments standard ...... device is enabled or before VI(IN) has been applied (see Figure 6).
Sep 22, 2004 - output voltage, basic non-isolated topologies can be used. .... converter and utilize the power transformer of the forward converter to do some of ...