LNA Telatemp 310 - F1CHF

thickness 250 µ. 3rd self polarised GaAs. FET. Separation wall for best isolation between stages. SMA RF output. 2nd DC pin. Bonding pads with. Au wedge ...
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LNA Telatemp model 310

F5DQK July 2009

LNA Harris Telatemp 310

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Abstract - External view - Internal view – zoom on passive and active components - Scalar broadband measurements - Noise/gain measures - Conclusion

F5DQK July 2009

LNA Harris Telatemp 310

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External view

+12V DC

RF out

F5DQK July 2009

RF in

LNA Harris Telatemp 310

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Internal view

1st stage

F5DQK July 2009

2nd stage

LNA Harris Telatemp 310

3rd stage

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Internal view : zoom on 1st and 2nd stage 10 nF decoupling cap

1st self polarised GaAs FET

SMA RF input

Grid to GND

F5DQK July 2009

Drain NiCr (low value) resistors with 22 µ Au wedge straps for best compromise

1st DC pin

Isolation cap between stages

50 µ Au ribbon straps (DC inputs)

Source NiCr resistors with 22 µ Au wedge straps for best compromise

2nd self polarised GaAs FET

LNA Harris Telatemp 310

Aluminas thickness 250 µ

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Internal view : zoom on 3rd stage 2nd DC pin Separation wall for best isolation between stages

SMA RF output Bonding pads with Au wedge

Aluminas thickness 250 µ 3rd self polarised GaAs FET

F5DQK July 2009

LNA Harris Telatemp 310

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Internal view : stubing technique with bonding pads on Al2O3 Au wedge diam 25 µ

47 pF ATC cap

50 Ω line w=250 µ Self polarised GaAs FET

Bonding pad Gate 10kΩ Ω NiCr resistor

F5DQK July 2009

47 pF ATC cap

LNA Harris Telatemp 310

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Internal view : zoom on NiCr drain resistor

22 µ Au wedge straps for best compromise

F5DQK July 2009

LNA Harris Telatemp 310

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Scalar mesurement setup

F5DQK July 2009

LNA Harris Telatemp 310

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Scalar linear broadband curve

Linear mode if Pin 25 dB and Nf < 3.5 dB - 10.2 to 12.2 GHz : gain > 25 dB and Nf < 3 dB

A 10.360 GHz : gain 26.8 dB, Nf = 2.85 dB

F5DQK July 2009

LNA Harris Telatemp 310

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