Oct 7, 2002 - Different kind of magnetic sensors exist on the market, which present different ... *Based on variation of resistance due to spin scattering.
O. Crépela,1, C. Goupila, B. Domengèsa, P. Descampsa,P.Perdub, A. Doukkalia aLaMIP,
Philips Semiconductors 14079 Caen, France.
b CNES,
31401 Toulouse, France.
ESREF 2002 EUFANET workshop october 7 th 2002
Magnetic Force Imaging
Introduction State of the art of magnetic sensors. Current mapping system. Results with AMR and GMR commercial sensors. FIB improvement. Conclusion
Olivier CREPEL
ESREF 2002 EUFANET workshop
Magnetic Force Imaging
*Aim : Non destructive FA is more and more required. Different kind of magnetic sensors exist on the market, which present different characteristic. Current mapping using very low field magnetic sensors is explored. *Expected sensibility : better than 1 µT for PCB imaging (2.5 mA and 500µm). better than 10 nT for IC imaging (5µA and 100µm). *”factor of goodness” : sensibility sensor size working distance Olivier CREPEL
ESREF 2002 EUFANET workshop
Magnetic Force Imaging
*More sensible sensor.(noise :reduction of active GMR layer size to improve spatial resolution.
Photography of the GMR active layer 400µm Olivier CREPEL
12µm 25µm ESREF 2002 EUFANET workshop
Magnetic Force Imaging
Objective : FIB modification on the GMR layer by depositing Platinum to improve the spatial resolution.
25µm 500µm Olivier CREPEL
ESREF 2002 EUFANET workshop
Magnetic Force Imaging
*Good sensibility obtained with GMR sensors. *New objectives :design new sensors with especially patterned GMR films. *Aim : Working distance 10µm. Sensor size 10µm. Sensibility 1 nT.
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