Attachment D: Application Form Last name: Perdu First name: Philippe Company: CNES Position within the company: Senior Expert (Microelectronics) Preferred EUFANET Board of Directors Position: The Symposium and Workgroup VicePresident Candidate short resume: Philippe Perdu is Senior Expert in microelectronics at CNES. He has led the VLSI Failure Analysis CNES laboratory since 1988. He holds an Electronic Specialty MS, Ph.D. and HDR (academic research supervisor). He has authored or co-authored more than 150 papers and 15 patents. He is chairman of CCT MCE, a corporate network on electronic components and MEMS, former president (2005 to 2009) of ANADEF, the French FA society, board of director member of EDFAS (Electron Device Failure Analysis Society) and EUFANET (European Failure Analysis NETwork). Vision of EUFANET’s future: The main purpose will remain to foster links between all the folks involved in FA (users, students, tool vendors …) in order to facilitate their day to day work and trigger opportunities at European level. Short / middle term: EUFANET is the only European network on this topic. It harmoniously works with other national societies (ANADEF, VDE, NMI …) or corporate networks (CCT …) to co organise extended workshops with them and publicize FA events. It develops training opportunities on advanced FA topics during workshops, seminars or through web site. Middle / long term: EUFANET becomes a key actor in FA community. It interacts with overseas societies or join worldwide society like EDFAS. It participates in working groups or triggers them when no solution is offered at European level. It helps to develop a strong FA network labs in Europe, interacts with European Program (at call level) and tool manufacturer (roadmaps). It helps labs to find solutions (outsourcing, equipment cross evaluation), FA engineers to find a job (posting CV and job opportunities), broadcast news to keep FA community informed of the latest developments. EUFANET will build its future while keeping its fair attitude with other societies. EUFANET will continue to promote cooperative approach without competition. EUFANET will evolve with a pragmatic approach based on its resources (we cannot do more than volunteers are
ready to do), low cost activities for EUFANET members with high impact in their FA activities.
in order to facilitate their day to day work and trigger opportunities at European level. Short / middle term: EUFANET is the only European network on this topic.
To describe a comprehensive overview of fault site localization technique by imaging with Nanoprobes. Resistive Contrast Imaging (RCI). Voltage DIstribution ...
FIB Micro-pillar sampling of Si devices and its 3D observation. T. Yaguchi, T. ... Introduction. New materials such as electronic and semiconductor devices.
Front side / Back side. Software enhancement. COMPUTER AIDED TOOLS FOR FA : NAVIGATION / BITMAP ( full integrated ). Behavioral simulation / diagnostic.
... Stimulation / Soft defect localization. ⢠IR Thermography ... Non destructive analysis ... Region Of Interest ? - Can you still test your product after preparation ?
needle stage, the geometry of the original specimen is not a limiting factor for ... Figure 4 shows a schematic flow for the FIB micro-pillar sample preparation ...
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Scanning Acoustic Microscopy usually used for detection of delamination extended for new applications: ⢠Detection of delaminated balls. ⢠Detection of cracks.
Gerald Beyer. â Ingrid De Wolf. â Ivan Ciofi. â Joke De Messemaeker. â Kris Vanstreels. â Michele Stucchi. â Myriam Van De Peer. â Olalla Varela Pedreira.
stress in Si which changes device performance. Transistor performance in TSV- proximity μ-raman. XRD (Synchrotron). Bowing. Thermal stability of. TSV.
Goal: Reach both dies without separating them, without damage on Cu wires and without acid leak. Methodology: 1. LASER cavity. 2. Wet chemical opening at ...
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To achieve these objectives, the Association plans, for example, to set up: - a Web site,. - a library of data on information available in the societies, the official ...
4 x 4 Ni insert contact matrix. (â 6 µm) ... 100°C . This phenomenon is reversible and can be attributed to the temperature dependence resistivity of the materials.
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