AH1 High Dynamic Range Amplifier
Product Features 250 – 4000 MHz +41 dBm OIP3 3 dB Noise Figure 13.5 dB Gain +22 dBm P1dB Lead-free/Green/RoHS-compliant SOT-89 Package • Single +5 V Supply • MTTF > 100 years • • • • • •
Applications • • • • • •
Mobile Infrastructure CATV / DBS W-LAN / Wi-Bro / WiMAX RFID Defense / Homeland Security Fixed Wireless
Product Description
Functional Diagram
The AH1 is a high dynamic range amplifier in a low-cost surface-mount package. The combination of low noise figure and high output IP3 at the same bias point makes it ideal for receiver and transmitter applications. The device combines dependable performance with superb quality to maintain MTTF values exceeding 100 years at mounting temperatures of +85 °C. The AH1 is available in the environmentally-friendly lead-free/green/RoHS-compliant SOT-89 package.
GND
The broadband amplifier uses a high reliability GaAs MMIC technology and is targeted for applications where high linearity is required. It is well suited for various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the AH1 will work for other applications within the 250 to 4000 MHz frequency range such as fixed wireless, WLAN, and WiBro.
Specifications (1) Parameter
4
1
2
3
RF IN
GND
RF OUT
Function Input Output/Bias Ground
Pin No. 1 3 2, 4
Typical Performance (4) Units
Min
MHz MHz dB dB dB dBm dBm dB mA V
250
Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Noise Figure (3) Operating Current Range Supply Voltage
12.4
+37 120
Typ 800 13.5 8 15 +21.7 +41 3.0 150 5
Max
Parameter
4000
Frequency S21 S11 S22 Output P1dB Output IP3 (2) IS-95 Channel Power (5) Noise Figure Supply Voltage Device Current
180
1. Test conditions unless otherwise noted: T = 25 ºC, 50 Ω system. 2. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Noise figure can be optimized by matching the input for optimal return loss.
Units MHz dB dB dB dBm dBm dB dB V mA
Typical 900 14.2 -21 -14 +21.7 +42 +15.5 3.2
1900 12.2 -14 -13 +22 +41 +16.5 3.3 5 150
2140 12.0 -21 -11 +22 +40 3.3
4. Parameters reflect performance in an AH1-PCB application circuit, as shown on page 3. 5. Measured with -45 dBc ACPR, IS-95 9 channels fwd.
Absolute Maximum Rating Parameter
Rating
Storage Temperature Supply Voltage RF Input Power (continuous) Junction Temperature Thermal Resistance, Rth
-55 to +150 °C +6 V +10 dBm +160 °C 59 °C / W
Operation of this device above any of these parameters may cause permanent damage.
Ordering Information Part No. AH1-G AH1-PCB
Description High Dynamic Range Amplifier (lead-free/green/RoHS-compliant SOT-89 Pkg)
0.8 – 2.5 GHz Fully Assembled Application Circuit
Standard T/R size = 1000 pieces on a 7” reel.
Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail:
[email protected] • Web site: www.wj.com, www.TriQuint.com
Page 1 of 5 January 2008
AH1 High Dynamic Range Amplifier
Typical Device Data S-Parameters (VDS = +5 V, IDS = 150 mA, T = 25 °C, unmatched device in a 50 ohm system) Input return loss can be improved with the appropriate input matching network shown later in this datasheet. Gain vs. Output Power
Output IP3 vs. Output Power
14
45
13
40
12
35
11
900 MHz IP3=35 IP3=36 IP3=37
30
100% Idss 75% Idss
10
OIP3 Load Pull Circles 900 MHz
25
50% Idss
9 5
10
15
20
IP3=38
75% Idss
IP3=39
50% Idss
20 0
100% Idss
0
IP3=41
5
Output Power (dBm)
10
15
20
VSWR=1.5
Output Power (dBm)
Gain vs. Frequency
VSWR=2 VSWR=3
Return Loss vs. Frequency
20
0
VSWR=4 VSWR=5
w/o Matching Circuitry
-5 15 -10 -15
10
-20 5 -25 0
S11
-30 0
500
1000
1500
2000
2500
3000
0
500
Frequency (MHz)
1000
1500
2000
S22
2500
3000
Frequency (MHz)
S-Parameters (VD = +5 V, ID = 150 mA, T = 25 °C, calibrated to device leads) Freq (MHz)
50 250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
-2.65 -7.97 -8.57 -8.47 -8.24 -7.79 -7.18 -6.55 -6.03 -5.69 -5.55 -5.68 -5.86
-29.52 -44.15 -60.61 -80.72 -100.99 -120.81 -138.15 -152.70 -164.30 -173.54 176.22 166.67 153.06
17.80 15.28 14.91 14.60 14.22 13.80 13.27 12.69 12.11 11.57 11.12 10.76 10.40
164.25 158.50 147.54 134.66 121.38 108.59 96.13 84.26 73.25 62.88 52.70 42.57 31.81
-24.29 -21.31 -21.11 -21.11 -21.21 -21.21 -21.41 -21.62 -21.83 -21.99 -22.10 -22.16 -22.27
45.18 6.75 -3.83 -10.90 -17.00 -23.01 -28.54 -33.67 -38.35 -42.48 -46.41 -50.57 -55.21
-8.25 -19.01 -25.15 -29.26 -30.76 -29.83 -29.30 -29.12 -28.24 -26.58 -25.60 -26.12 -29.48
-39.80 -65.37 -69.25 -84.69 -115.12 -88.78 -94.19 -136.07 -112.00 -97.44 -90.19 -87.80 -82.67
Device S-parameters are available for download off of the website at: http://www.wj.com
Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail:
[email protected] • Web site: www.wj.com, www.TriQuint.com
Page 2 of 5 January 2008
AH1 High Dynamic Range Amplifier
Application Circuit: 800 – 2500 MHz (AH1-PCB) Vcc = +5 V ID=C5 C=56 pF
Typical RF Performance at 25 °C Frequency S21 – Gain S11 – Input R.L. S22 – Output R.L. Output P1dB Output IP3
All passive components are of size 0603 unless otherwise noted.
MHz 900 1900 2140 dB 14.2 12.2 12.0 dB -21 -14 -21 dB -14 -13 -11 dBm +21.7 +22 +22 dBm
(+5 dBm / tone, 10 MHz spacing)
IS-95 Channel Power
+42
+41
Component C1 is shown in the silkscreen but is not used for this configuration. Z0=22 Ohm EL=15.2 Deg F0=0.9 GHz
ID=C2 C=56 pF
+40
ID=C6 C=56 pF
dBm +15.5 +16.5
(@-45 dBc ACPR, 9 channels fwd)
dB
Noise Figure Device Bias
ID=C4 L=12 nH
ID=Q1 NET="AH1"
ID=C3 L=5.6 nH
3.2 3.3 3.3 +5V @ 150mA
Circuit Board Material: .062” total thickness with a .014” FR-4 top RF layer, 4 layers (other layers added for rigidity), 1 oz copper, 50Ω Microstrip line details: width = .025”.
Gain
Return Loss
15
Gain and Output IP3 vs. Temperature
0
Frequency = 800, 801 MHz @ Pout =5dBm
45
14
44
13
43
12
42
Gain (dB)
-10 -15
12
-20 11
-25
10
-30
750
1000
1250
1500
1750
2000
2250
Gain
11
S11
S22 10
750
1000
1250
Frequency (MHz)
1500
1750
2000
2250
40 -40
-15
ACPR vs. Channel Power
ACPR vs. Channel Power
-50
-50
-60
-60
35
60
85
P1dB and Noise Figure vs. Temperature
IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 900 MHz
Frequency = 800 MHz
23 P1dB (dBm)
-40
10
Temperature (oC)
Frequency (MHz)
IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 1900 MHz
41
OIP3
4
22
3
21
2
20
1
P1dB
Noise Figure (dB)
13
Output IP3 (dBm)
-5
14
-40
15
NF
-70
-70 10
11
12
13
14
15
Output Channel Power (dBm)
16
17
19 10
11
12
13
14
15
16
17
0 -40
-15
10
35
o
60
85
Temperature ( C)
Output Channel Power (dBm)
Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail:
[email protected] • Web site: www.wj.com, www.TriQuint.com
Page 3 of 5 January 2008
AH1 High Dynamic Range Amplifier
250 - 650 MHz Reference Design Gain / Return Loss
250 14.8 -10 -19
450 650 14.5 13.8 -36 -11 -17 -13 +22 +42 2.8 2.8 3.2 +5V @ 150mA
16
0 DB(|S(2,1)|) (L)
DB(|S(1,1)|) (R)
DB(|S(2,2)|) (R) +5V
15
-5
14
-10
13
-15
C=1000 pF
S 11, S22 (s B)
MHz dB dB dB dBm dBm dB
G ain (dB)
Freq. Gain S11 S22 P1dB OIP3 NF Bias
L=82 nH NET="AH1" C=1000 pF
L=15 nH
12
-20
11
-25 0.2
0.3
0.4 0.5 Frequency (GHz)
0.6
0.7
900 MHz Reference Design +5 V
800 13.7 -13 -13
900 1000 13.7 13.6 -16 -18 -14 -15 +22 +41 2.5 +5V @ 150mA
C=100 pF
Gain / Return Loss 15
0
DB(|S(2,1)|) (L)
DB(|S(1,1)|) (R)
DB(|S(2,2)|) (R)
14
-5
13
-10
12
-15
11
-20
10
L=100 nH
S11, S 22 (dB)
MHz dB dB dB dBm dBm dB
G ain (dB )
Freq. Gain S11 S22 P1dB OIP3 NF Bias
C=100 pF
NET="AH1"
C=100 pF
L=12 nH
-25 0.7
0.8
0.9 Frequency (GHz)
1
1.1
2350 MHz Reference Design Gain / Return Loss 13
2.3 12.0 -24 -12
2.35 2.4 12.0 11.9 -40 -25 -13 -14 +22 +41 3.7 +5V @ 150mA
DB(|S(1,1)|) (R)
C=56 pF
DB(|S(2,2)|) (R)
12
-5
11
-10
10
-15
9
-20
TLINP Z0=50 Ohm L=250 mil Eeff=3.4 Loss=0 F0=0 GHz
S 11, S 22 (sB)
GHz dB dB dB dBm dBm dB
G ain (dB)
Freq. Gain S11 S22 P1dB OIP3 NF Bias
+5V
0 DB(|S(2,1)|) (L)
L=22 nH NET="AH1"
C=56 pF
C=1.2 pF
8
-25 2.1
2.2
2.3 2.4 Frequency (GHz)
2.5
2.6
3500 MHz Reference Design Gain / Return Loss
3.3 9.8 -10 -16
3.5 3.8 9.9 9.5 -18 -14 -17 -16 +21.6 +41 4.8 4.3 4.1 +5V @ 150mA
11
0
DB(|S(1,1)|) (R)
DB(|S(2,2)|) (R)
+5V
DB(|S(2,1)|) (L)
C=18 pF
10
-5
9
-10
8
-15
7
-20
6
-25
S11, S22, (dB)
GHz dB dB dB dBm dBm dB
G ain (dB)
Freq. Gain S11 S22 P1dB OIP3 NF Bias
TLINP Z0=80 Ohm L=50 mil Eeff=3.4 Loss=0 F0=0 GHz
L=12 nH NET="AH1"
C=18 pF
C=1 pF
3
3.2
3.4 3.6 Frequency (GHz)
3.8
4
Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail:
[email protected] • Web site: www.wj.com, www.TriQuint.com
Page 4 of 5 January 2008
AH1 High Dynamic Range Amplifier
AH1-G (Green / Lead-free SOT-89 Package) Mechanical Information This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded (maximum 245 °C reflow temperature) soldering processes. The plating material on the leads is NiPdAu.
Outline Drawing
Product Marking The AH1-G will be marked with an “AH1G” designator. An alphanumeric lot code (“XXXX-X”) is also marked below the part designator on the top surface of the package. The obsolete tin-lead package is marked with an “AH1” designator followed by an alphanumeric lot code.
AH1G XXXX-X
Tape and reel specifications for this part are located on the website in the “Application Notes” section.
MSL / ESD Rating Land Pattern ESD Rating: Value: Test: Standard:
Class 1B Passes ኑ500V to
