SIL for improved sensitivity and spatial resolution Herve ... - eufanet

50x, 0.6NA 1K InGaAs overlay image. (cropped) of 140nm ring oscillator. 1.3V,. INT = 60s. 100µm substrate thickness. Sensitivity limit at 50x in 60s = 1.0V ...
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SIL for improved sensitivity and spatial resolution Herve Deslandes, DCG Systems

EUFANET - Jan 26 2009

Why is Sensitivity important? z

High resolution fault localization requires enough sensitivity at high magnification

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High Sensitivity is required to obtain/maintain “fault detectibility” for advanced technology nodes because Vdd keeps decreasing

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High Sensitivity is required for new dynamic applications

Example: Magnification and SNR (1) 100x

Let’s take the case where the signal is distributed over 1 pixel

25x

100

40

30

10

110

120

80

20

100 150

70

30

40

40

20

60

Emitter Signal = 150 This case assumes object size >> diffractionlimited spot size

1. S ∝ (NA/M)2 2. ∴ S reduced by ≈16x assuming same NA

Σ Signal = 150

Example: Magnification and SNR (2) 100x The noise is distributed like this… 15

15

15

15

15

15

15

15

15

15

15

15

15

15

15

inherent property of signal detection, which cannot be reduced by design 15 15 15camera15 factors, it essentially represents a "noise floor" that is the minimum achievable 15 15 15 15 noise level

15

Centroid

25x

15 is an 15 15 Because 15 photon noise

Emitter Signal = 150

15

FOV Noise = 240

S/N = 150 / 15 = 10

15

15

15

FOV Noise = 240

Emitter Centroid within this Pixel S/N = > 10 1.3V, INT=60s SNR ≈ 10 0.9V, INT=60s SNR ≈ 5 ≈19 µm 0.8V, INT=60s 220x SIL (2.45NA) 1K InGaAs overlay image (cropped) of 140nm ring oscillator. 1.3V, INT = 60s. 100µm substrate thickness.

Sensitivity limit with SIL in 60s: 800mV (200mV better than 50x)

Sensitivity limit for each lens (1/3) z z z

Core Voltage is changed by 100mV steps Integration time is constant for each acquisition Device is about 100µm Si thick

50x – 1.2V Images courtesy of ST

Detection limit ≈ 0.8V No background subtraction provides better SNR but is less uniform

Sensitivity limit for each lens (2/3) STD SIL images

Images courtesy of ST

1x 20x 50x Mit 100x HR Std SIL LWD SIL

LN2 InGaAs 0.9V 0.9V 0.9V 0.9V 0.7V 0.7V

SIL is the most sensitive lens

Similar performance on another device

STD SIL image

Sensitivity limits

Image courtesy of ST

Resolution - 45nm images (1/2) 1x LWD SIL – 1.47 NA

20x

Images courtesy of ST Crolles

Resolution - 45nm images (2/2) LWD SIL

STD SIL

Images courtesy of ST Crolles

1.47NA 1.47NA 100um 100umSi Si ± 50um (works from 0um to 350um)

2.45NA 100um Si ± 50um

SIL for DLS applications ƒ Customer had an issue in a memory and stated that 100x was not giving him enough resolution ƒ The scan chain output pattern was monitored at a specific vector to determine pass or fail Scan out Monitoring this vector only

Device got killed just shortly after switching to 2.5x LSM zoom Images courtesy of Texas Instruments

SIL for Logic State Mapping The emission microscope is linked with the tester to take one emission image and then advance the tester to next vector and re-acquire image…

Tester: Vector + 1 Logical values for box #:1 2

1.5

100x images

Emission Logic value

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1

0.5

Logic states can then be measured for each vector. In this example, from vector 12344 to 12357

0

-0.5

-1

1.2344

1.2346

1.2348

1.235 1.2352 Vector number

1.2354

1.2356

1.2358 4

x 10

CONCLUSION z

SIL improvement for resolution. -

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Macro lens traditionally was the most sensitive lens -

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applies for higher pixel count camera with smaller pitch No longer true with SIL SIL is the most sensitive lens

SIL benefits both emission & LSM applications -

Be careful not to apply too much laser power Š

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Especially when using LSM optical zoom

New SILs in development will further improve performance without comprising ease of use