MJ802 MJ4502 COMPLEMENTARY SILICON HIGH POWER TRANSISTORS
SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION The MJ802 (NPN) and MJ4502 (PNP) are silicon epitaxial-base complementary power transistor in Jedec TO-3 metal case, intended for general purpose power amplifier and switching applications.
V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0)
T est Con ditio ns I C = 200 mA
Min .
T yp.
Max.
90
Unit V
I CBO
Collector Cut-off Current (I E = 0)
V CB = 100 V T case = 150 oC
1 5
mA mA
I EBO
Emitter Cut- off Current (I C = 0)
V EB = 4 V
1
mA
V CER(sus )∗ Collector-emitter Sustaining Voltage (R BE = 100 Ω) h FE∗
I C = 200 mA
100
DC Current Gain
I C = 7.5 A
V CE = 2 V
100
V
V CE(sat) ∗
Collector-Emitter Saturation Voltage
I C = 7.5 A
IB = 0.75 A
0.8
V
V BE(sat )∗
Base-Emitter Saturation Voltage
I C = 7.5 A
IB = 0.75 A
1.3
V
V BE ∗
Base-Emitter Voltage
I C = 7.5 A
V CE = 2 V
1.3
V
fT
Transition Frequency
IC = 1 A f = 1 MHz
VCE = 10 V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP types voltage and current values are negative.
2/4
25
V
2
MHz
MJ802/MJ4502
TO-3 (H) MECHANICAL DATA mm
DIM. MIN. A
inch
TYP.
MAX.
MIN.
TYP.
11.7
B
MAX.
0.460
0.96
1.10
0.037
0.043
C
1.70
0.066
D
8.7
0.342
E
20.0
0.787
G
10.9
0.429
N
16.9
0.665
P
26.2
R
3.88
1.031
4.09
U
0.152
39.50
V
1.555
30.10
1.185
A
P
D
C
O
N
B
V
E
G
U
0.161
R
P003N 3/4
MJ802/MJ4502
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A .
Tst g. Storage Temperature. -65 to 200. oC. Tj. Max. Operating Junction Temperature. 200. oC. For PNP types voltage and current values are negative. 1. 2. 3.
n. HIGH GAIN n. HIGH CURRENT ... Parameter. Value. Unit ... Thermal Resistance Junction-case. Max. 1.17 ... Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
mA. Ptot. Total Dissipation at Tcase ⤠25 oC. Tamb ⤠25 oC. 50. 2. W. W. Tstg. Storage Temperature. -65 to 150. oC. Tj. Max. Operating Junction Temperature.
62.5. oC/W. oC/W. ELECTRICAL CHARACTERISTICS (Tcase = 25 o. C unless ... 0.8. 0.8. V. V. VBEâ. Base-Emitter Voltage. IC =2A. VCE = 2 V. 1.5. V. hFEâ.
Emitter Cut-off Current. (IC = 0). VEB = 5 V. 5. mA. VCEO(sus)* Collector-Emitter. Sustaining Voltage. (IB = 0). IC = 30 mA for TIP135 for TIP132/TIP137. 60. 100.
Fall time = 0.3 μs (typ) at IC = 1.0 A. ⢠VCE(sat) = 1.0 ... (IC = 0.3 Adc, IB = 30 mAdc) ... 2.54. 3.04. R. 0.080. 0.110. 2.04. 2.79. S. 0.045. 0.055. 1.15. 1.39. T. 0.235.
Collector Cut-off. Current (IB = 0) for 2N3771 VCB = 30 V for 2N3772 VCB = 50 V. 10. 10. mA. mA. ICBO. Collector Cut-off. Current (IE = 0) for 2N3771 VCB = 50 ...
SWITCH MODE POWER SUPPLIES. DESCRIPTION. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. INTERNAL ...
mA. W. W. °C. °C. Characteristic. Symbol. Test Conditions. Min. Max. Unit. Collector Emitter Sustaining Voltage. Collector Cutoff Current. Collector Cutoff Current.
